• Latest Trench Power AlphaMOS (αMOS MV) technology

• Very Low RDS(ON)

• Low Gate Charge

• Optimized for fast-switching applications

• RoHS and Halogen-Free Compliant                         ...

Advanced Process Technology

Ula Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche RatedLead-Free                             ...

Advanced Process Technology

Ula Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche RatedLead-Free                               ...

Low specific on-state resistance (RDS(on)*A)

Very low energy storage in output capacitance (Eoss) @400V

Low gate charge (Qg)

Fieldproven CoolMOS™ quality

CoolMOS™ technology has been manufactured by Infineon since 1998

Planar cell sucture for wide SOA

Optimized for broadest availability from disibution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Indusy standard surface-mount power package

Capable of...

Planar cell sucture for wide SOA

Optimized for broadest availability from disibution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Indusy standard surface-mount power package

Capable of...

Planar cell sucture for wide SOA

Optimized for broadest availability from disibution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Indusy standard surface-mount power package

Capable of...

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate-drive voltage (called normal level)

Industry standard surface-mount power package

Capable of being wave-soldered

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current

applications

• 100% RG Tested

• Lead-Free         ...

RoHS Compliant

Industry-leading quality

Low RDS(ON) at 4.5V VGS

Fully Characterized Avalanche Voltage and Current

Ultra-Low Gate Impedance                                     ...

RoHS Compliant

Industry-leading quality

Low RDS(ON) at 4.5V VGS

Fully Characterized Avalanche Voltage and Current

Ultra-Low Gate Impedance                                   ...

High Frequency 3.3V and 5V input Point- of-Load Synchronous Buck Converters for Netcom and Computing Applications

Power Management for Netcom, Computing and Portable Applications

Lead-Free                         ...

Optimized for broadest availability from distribution partners

Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)

Reduced design complexity in high-side configuration (vs N-channel...

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of...

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of...

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered...

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of...

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for, provides...

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the...

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known...

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known...

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known...

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known...

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known...

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the...

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the...

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the...

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known...

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this...

The latest 800V Cool MOS™ P7  series sets a new bench mark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use,resulting from Infineon’s over 18 years

pioneering super junction technology innovation.

Potential...

The IDW30C65D2 from Infineon Technologies is a Power Diode with Forward Current 15 to 30 A, Forward Voltage 1.6 to 2.2 V, Repetitive Peak Reverse Voltage 650 V, Non-Repetitive Peak Forward Current 100 A, Recovery Time 51 nS. 

Summary of Features:

1.35 V temperature-stable...

IPD050N03L G Infineon Technologies Transistor MOSFET N-CH, 30V, 50A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0042ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power , RoHS

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs...

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs...

650V Cool MOSªCE Power Transistor Cool MOS™ isa revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. Cool MOS™CE is a price-er form an ce optimized platform enabling to target cost sensitive...

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Package (RoHS compliant)

100% Avalanche tested                         ...