30V N-Channel AlphaMOS                                       

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(ON) at 4.5V VGS

• Low Gate Charge

• High...

30V N-Channel AlphaMOS                                     

 • Latest Trench Power AlphaMOS (αMOS LV) technology                   ...

30V N-Channel MOSFET                                                 

• Trench Power MOSFET technology

• Very Low RDS(on) at 4.5VGS

• Low Gate...

30V N-Channel AlphaMOS                                           

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(on) at 4.5VGS

• Low Gate...

30V N-Channel AlphaMOS                                       

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Integrated Schottky Diode (SRFET)

• Very Low RDS(on) at...

30V Dual Asymmetric N-Channel AlphaMOS                         

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(on) at 4.5VGS

• Low Gate Charge

• High Current Capability

• RoHS and...

30V P-Channel MOSFET                                         

• Latest Advanced Trench Technology 

 • Low RDS(ON)

 • High Current Capability

 •...

MOSFET N-CH 30V 4A SOT23-3L 

The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

30V P-Channel MOSFET

The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.

N-Channel Enhancement Mode Field Effect Transistor 

The AO3404A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. 

30V P-Channel MOSFET

The AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

30V P-Channel MOSFET 

The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications

20V P-Channel MOSFET

The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

20V N-Channel MOSFET 

The AO3414 uses advanced trench technology to  provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

N-Channel Enhancement Mode Field Effect Transistor 

 The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and  operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications....

20V P-Channel MOSFET 

The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

20V N-Channel MOSFET 

The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected

20V P-Channel MOSFET   

The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.

20V N-Channel MOSFET 

The AO3420 uses advanced trench technology to provide 20V excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load...

100V N-Channel MOSFET 

 The AO3442 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED...

60V N-Channel MOSFET

 Trench Power MV MOSFET technology 60V

 • Low RDS(ON)

 • Low Gate Charge

 • ESD protected

 • AO4262E SO-8 Tape & Reel 3000    Applications

 • High efficiency power supply

 •...

60V N-Channel AlphaSGT 

• Trench Power AlphaSGTTM technology 

 • Low RDS(ON)

 • Low Gate Charge

 • ESD protected                                     ...

30V N-Channel AlphaMOS 

  • Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(on) at 4.5VGS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant   Application 

 • DC/DC Converters in...

20V N-Channel MOSFET 

• Trench Power MOSFET technology

 • Low RDS(ON)

 • RoHS and Halogen-Free Compliant  Applications   

• DC/DC Converters in Computing, Servers, and POL

 • Battery protection switch

30V N-Channel MOSFET

The AO4406A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS and general purpose applications

30V N-Channel MOSFET

The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS an general purpose applications.

30V P-Channel MOSFET

The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. 

* RoHS and Halogen-Free Complain

30V P-Channel MOSFET

The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.

30V P-Channel MOSFET 

 • Latest advanced trench technology

 • Low RDS(ON)

 • High Current Capability

 • RoHS and Halogen-Free Compliant                   

Applications     ...

200V N-Channel MOSFET 

 • Trench Power MV MOSFET 

• Low RDS(ON)

• Low Gate Charge

• Optimized for fast-switching applications                 

Applications             ...

40V N-Channel MOSFET                                             

The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high...

80V N-Channel MOSFET 

The AOD2810 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss....

100V N-Channel MOSFET 

The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss....

100V N-Channel MOSFET 

The AOD2916 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss....

30V P-Channel MOSFET

The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications

P-Channel Enhancement Mode Field Effect Transistor 

The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load...

N-Channel Enhancement Mode Field Effect Transistor

The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.

 -RoHS...

40V P-Channel MOSFET                                               

The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate...

P-Channel Enhancement Mode Field Effect Transistor   

 The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance

of the DPAK package, this device is well suited for high...

40V N-Channel MOSFET 

The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is well suited for high 

current load applications.

20V N-Channel MOSFET 

The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch

and battery protection applications.

60V N-Channel MOSFET

The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those  devices are suitable for use as a load switch or in PWM applications.

60V N-Channel MOSFET                                         

The AOD444/AOI444 combine advanced trench MOSFET  technology with a low resistance package to provide ...

200V N-Channel MOSFET 

The AOD4504 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost

converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED...

250V,14A N-Channel MOSFET                                     

The AOD458 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of...

300V,11.5A N-Channel MOSFET                                           

The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed...

30V N-Channel AlphaMOS                                         

• Latest Trench Power MOSFET technology

• Very Low RDS(on) at 4.5V VGS

• Low Gate Charge

• High...

650V, 5A Alpha IGBT TM

With soft and fast recovery anti-parallel diode                 

• Latest AlphaIGBT (α IGBT) technology

• 650V breakdown voltage

• Very fast and soft recovery freewheeling diode

• High efficient...

Dual P-Channel Enhancement Mode Field Effect Transistor     

The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM...