ICE2PCS0x/G are the 2nd generation of Continuous Conduction Mode (CCM) PFC controllers, which employ BiCMOS technology. Compared to the 1 st generation of ICE1PCS01/02, the new ICs have lower internal reference trimmed at 3V. They also have other advantages such as wider Vcc operating range,...

Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 Discrete copacked with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The...

High speed 1200 V, 40 A hard-switching TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off...

The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™...

The XDP™ XDPE12284C is a digital dual-rail 8-phase controller that provides power for Intel VR13, VR13HC, IMVP8 and IMVP9 server, workstation, and high-end desktop applications. The controller offers flexible phase assignment between the two loops and can be configured in any of the following...

With an input voltage range of 3 V to 40 V and very low quiescent of only 40 μA, these regulators are perfectly suitable for automotive or any other supply systems connected to the battery permanently. The TLS850F1TAV50 provides an output voltage accuracy of 2 % and a maximum output current up...

With an input voltage range of 3 V to 40 V and very low quiescent of only 40 μA, these regulators are perfectly suitable for automotive or any other supply systems connected to the battery permanently. The TLS820F1ELV50 provides an output voltage accuracy of 2 % and a maximum output current up...

With an input voltage range of 2.75 V to 42 V and ultra low quiescent of only 5.5 μA, the regulator is perfectly suitable for automotive or any other supply systems connected permanently to the battery. The TLS810B1xxV50 is the fixed 5 V output version with an accuracy of 2% and output current...

The IC is designed to supply off-board systems, for example sensors in powertrain management systems under the severe conditions of automotive applications. Therefore, the IC is equipped with additional protection functions against reverse polarity and short circuit to GND and battery. With...

The wide switching frequency range allows optimization in respect of efficiency and usage of small filter components. A dedicated reference-regulator supplies the ADC independent from μC-load steps and acts as tracking-source for the 2 independent sensor-supplies. The flexible state machine,...

The wide switching frequency range allows optimization in respect of efficiency and usage of small filter components. A dedicated reference-regulator supplies the ADC independent from μC-load steps and acts as tracking-source for the 2 independent sensor-supplies. The flexible state machine,...

The wide switching frequency range allows optimization in respect of efficiency and usage of small filter components. A dedicated reference-regulator supplies the ADC independent from μC-load steps and acts as tracking-source for the 2 independent sensor-supplies. The flexible state machine,...

This concept of a synchronous and seamless buck-boost regulation provides a very efficient solution for circuits where the output (load) voltage is on the same level as the input voltage, e.g. in short chains with 2 to 3 high power LEDs or laser diodes connected to a 12 V electrical...

IGBT / MOSFET gate driver booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable and ASC Input signals.

Summary of Features:

Single Channel IGBT / MOSFET Gate Driver...

Summary of Features:

Coreless transformer isolated driver

Basic insulation according to DIN EN 60747-5-2, pending

Integrated protection features

Suitable for operation at high ambient temperature

Automotive Qualified

2A rail-to-rail...

1ED020I12-FT is a galvanic isolated single channel gate driver in DSO-16 wide body package that provides an output current capability of typically 2 A. All logic pins are 5V CMOS compatible and could be directly connected to a microcontroller. The data transfer across galvanic isolation is...

EiceDRIVER™ 1200 V  high side gate driver IC with typical 4.0 A source and 3.5 A sink in a wide-body DSO-8 package with CT technology for IGBT Modules.

For higher isolation rating, higher current, shorter propagation delay, check out our newly released X3 Compact family,...

EiceDRIVER™ Compact 1200 V single-channel isolated gate driver with 3.5/4 A typical sinking and sourcing peak output current in DSO-8 narrow package with 4 mm creepage distance for MOSFETs.

1EDI20N12AF belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-AF family). 1EDI20IN12AF...

EiceDRIVER™ 1200 V high side gate driver IC with typical typical 10.0 A source and 9.4 A sink currents in DSO-8 package for IGBT.

For higher isolation rating, higher current, shorter propagation delay, check out our newly released X3 Compact family, 1ED3124MU12H. The DSO-8 150 mil narrow...

1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness.

1EDN family: Fast, precise, strong and...

EiceDRIVER™ 1200 V half-bridge Gate Driver IC for IGBT, MOSFET and SiC MOSFET with typical 1.5 A source and 2.5 A sink currents in PG-DSO-18 package.

Summary of Features:

1200 V coreless transformer isolated Driver ICs

Rail-to-rail outputs

Protection...

EiceDRIVER™ Compact - Full bridge 3 Phase gate driver IC with LS-SOI technology to control power devices like MOS-transistors or 600V IGBTs.

Summary of Features:

Thin-film-SOI-technology

Maximum blocking voltage +600V

Separate control circuits for all six...