Product Description
Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
Product Features
• Patented High Reliability GaAs HBT Technology
• High 3rd Order Intercept : +39 dBm typ. at 1960 MHz
• Surface-Mountable Power Plastic Package
Applications
• PCS, Cellular Systems
• High Linearity IF Amplifiers