Bipolar (BJT) Transistor PNP 20V 5A 120MHz 1W Surface Mount CPT3

Bipolar Transistors - BJT PNP 20V 5A

Features

1) Low VCE(sat).

VCE(sat) = −0.35V (Typ.)

(IC/IB = −4A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2118.

Bipolar (BJT) Transistor PNP - Darlington 100V 2A 50MHz 2W Surface Mount MPT3

Darlington Transistors DARL PNP 100V 2A

Features

1) Darlington connection for high DC current gain.

2) Built-in resistor between base and emitter.

3) Built-in damper diode.

4)...

Bipolar (BJT) Transistor NPN 32V 2A 100MHz 2W Surface Mount MPT3

Bipolar Transistors - BJT NPN 32V 2A

Features

1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A)

2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 /...

Bipolar (BJT) Transistor PNP 50V 2A 320MHz 2W Surface Mount MPT3

Bipolar Transistors - BJT PNP 50V 3A Transistor

Features

1) Suitable for Middle Power Driver.

2) Low VCE(sat)

VCE(sat)=-0.20V(Max.).

(IC/IB=-1A/-50mA)

3) High collector...

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Features

For high frequency

Small Surface Mount Package

Pb Free/RoHS...

Bipolar (BJT) Transistor NPN 30V 100mA 200MHz 350mW Surface Mount SST3

Bipolar Transistors - BJT NPN 30V 1MA

NPN Silicon AF Transistors

● For AF input stages and driver applications

● High current gain

● Low collector-emitter saturation voltage

● Low noise...

Bipolar (BJT) Transistor PNP 32V 800mA 200MHz 200mW Surface Mount SMT3

Bipolar Transistors - BJT PNP 32V 0.8A

Features

Suitable for Middle Power Driver

Low VCE(sat)

Small Surface Mount Package

Pb Free/RoHS Compliant

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 350mW Surface Mount SST3

Bipolar Transistors - BJT 40V 20MA

Features

For switching

Small Surface Mount Package

Pb Free/RoHS Compliant

Bipolar (BJT) Transistor NPN 20V 500mA 350MHz 300mW Through Hole SPT

Features

1) High DC current gain. hFE = 1200 (Typ.)

2) High emitter-base voltage. VEBO = 12V (Min.)

3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

Bipolar (BJT) Transistor NPN 20V 50mA 1.5GHz 200mW Surface Mount UMT3

Trans GP BJT NPN 20V 0.05A 3-Pin UMT T/R

Bipolar Transistors - BJT NPN 20V 50MA SOT-323

Product Details

Features

1) High transition frequency. (Typ. fT = 1.5GHz)

2) Small rbb’Cc and high...

ipolar (BJT) Transistor NPN 40V 600mA 300MHz 200mW Surface Mount UMT3 Bipolar Transistors - BJT NPN 40V 0.6A Features 1) BVCEO > 40V (IC=10mA) 2) Complements the UMT2907A / SST2907A / MMST2907A.