Bipolar (BJT) Transistor NPN 20V 500mA 350MHz 300mW Through Hole SPT
Features
1) High DC current gain. hFE = 1200 (Typ.)
2) High emitter-base voltage. VEBO = 12V (Min.)
3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
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Transistors (BJT) - Single
2SD2144STPV
2SD2144STPV
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Model: 2SD2144STPV
Order No:
SKU: 10000075176801
Size: 0.00 cm，0.00 cm，0.00 cm
Weight: 0.00kg
In Stock
Brief Introduction
2SD2144STPV
<p>Bipolar (BJT) Transistor NPN 20V 500mA 350MHz 300mW Through Hole SPT</p><p>Features</p><p>1) High DC current gain. hFE = 1200 (Typ.)</p><p>2) High emitter-base voltage. VEBO = 12V (Min.)</p><p>3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)</p>
Description
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